unisonic technologies co., ltd 2sa684 pnp silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2009 unisonic technologies co., ltd qw-r211-006.c pnp silicon transistor ? description the utc 2sa684 is power amplifier and driver. ? features * automatic insertion by radial taping possible. * complementary pair with 2sc1384 lead-free: 2sa684l halogen-free: 2sa684g ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing 2sa684-x-ab3-r 2sa684l-x-ab3-r 2sa684g-x-ab3-r sot-89 b c e tape reel 2SA684-X-T9N-B 2sa684l-x-t9n-b 2sa684g-x-t9n-b to-92nl e c b tape box 2sa684-x-t9n-k 2sa684l-x-t9n-k 2sa684g-x-t9n-k to-92nl e c b bulk
2sa684 pnp silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r211-006.c ? absolute maximum ratings ( ta=25 ,unless otherwise specified ) parameter symbol ratings unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v peak collector current i cp -1.5 a collector current (dc) i c -1 a sot-89 500 mw collector dissipation to-92nl p c 1000 mw junction temperature t j +150 storage temperature t stg -55 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-10 a, i e =0 -60 v collector-emitter breakdown voltage bv ceo i c =-2ma, i b =0 -50 v emitter-base breakdown voltage bv ebo i e =-10 a, i c =0 -5 v collector cut-off current i cbo v cb =-20v, i e =0 -0.1 a h fe1 v ce =-10v, i c =-500ma 85 340 dc current gain h fe2 v ce =-5v, i c =-1a 50 collector-emitter satu ration voltage v ce(sat) i c =-0.5a, i b =-50ma -0.2 -0.4 v base-emitter satura tion voltage v be(sat) i c =-0.5a, i b =-50ma -0.85 -1.2 v current gain bandwidth product f t v ce =-10v, i b =50ma, f=200mhz 200 mhz output capacitance c ob v cb =-10v, i e =0, f=1mhz 20 30 pf ? classification of h fe1 rank q r s range 85-170 120-240 170-340
2sa684 pnp silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r211-006.c ? typical characteristics base to emitter saturation voltage, v be(sat) (v) forward current transfer ratio, h fe
2sa684 pnp silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r211-006.c ? typical characteristics(cont.) collector to emitter voltage vs. base to emitter resistance 100 base to emitter resistance, r be (k ) 0 -40 -60 -80 -100 -120 -20 0.1 0.3 131030 i c =-10ma ta=25 v ce =-10v 0 20 40 60 80 100 120 140 160 ambient temperature, ta ( ) 1 10 10 2 10 3 10 4 collector to emitter current vs. ambient temperature area of safe operation (aso) -100 collector to emitter voltage, v ce (v) -0.001 -0.01 -0.1 -1 -3 -10 -0.003 -0.1 -0.3 -1 -3 -10 -30 -0.03 -0.3 single pulse ta=25 i cp t=1s t=10ms
2sa684 pnp silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r211-006.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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